Title :
A process-technology-scaling-tolerant pipelined ADC architecture achieving 6-bit and 4 GS/s ADC in 45nm CMOS
Author :
Chen, M.W. ; Carley, L.R. ; Ricketts, David S.
Author_Institution :
Carnegie Mellon Univ., Pittsburgh, PA, USA
Abstract :
A process-technology-scaling-tolerant pipelined ADC architecture has been demonstrated achieving 4 GS/s and 6-bit resolution in 45nm SOI CMOS. It utilizes open-loop, op-amp-less residue amplifier stages employing background master-slave gain calibration in order to achieve 4 GS/s clock rates while maintaining compatibility with deeply scaled CMOS processes. The pipelined ADC consumes 38 mW of power from a 1.4 V supply while operating at 4 GS/s and occupies a core area of only 0.04 mm2 due to its use of compact open-loop residue amplifiers. The measured DNL and INL are -0.8/1.0 LSB and -1.0/0.9 LSB, respectively. The ADC SNDR at 4 GS/s is 31.6 dB with a 250 MHz input and 27.3 dB with a 1.8 GHz input.
Keywords :
CMOS integrated circuits; amplifiers; analogue-digital conversion; calibration; silicon-on-insulator; ADC SNDR; DNL; INL; SOI CMOS; background master-slave gain calibration; frequency 1.8 GHz; frequency 250 MHz; open-loop op-amp-less residue amplifier stages; power 38 mW; process-technology-scaling-tolerant pipelined ADC architecture; size 45 nm; voltage 1.4 V; word length 6 bit; CMOS integrated circuits; CMOS process; Calibration; Clocks; Gain; Master-slave; Pipelines; Analog-to-digital converter; SOI CMOS; calibration; open-loop; pipelined ADC;
Conference_Titel :
Silicon Monolithic Integrated Circuits in Rf Systems (SiRF), 2014 IEEE 14th Topical Meeting on
Conference_Location :
Newport Beach, CA
DOI :
10.1109/SiRF.2014.6828533