Title :
A 10-mW Submillimeter-Wave Solid-State Power-Amplifier Module
Author :
Radisic, Vesna ; Deal, William R. ; Leong, Kevin M K H ; Mei, X.B. ; Yoshida, Wayne ; Liu, Po-Hsin ; Uyeda, Jansen ; Fung, Andy ; Samoska, Lorene ; Gaier, Todd ; Lai, Richard
Author_Institution :
Northrop Grumman Corp., Redondo Beach, CA, USA
fDate :
7/1/2010 12:00:00 AM
Abstract :
In this paper, we demonstrate a packaged sub-millimeter wave solid-state power amplifier (SSPA). The SSPA is implemented in coplanar waveguide (CPW) and uses an advanced high fMAX InP HEMT transistor with a sub 50-nm gate. A monolithically integrated CPW dipole-to-waveguide transition eliminates the need for wirebonding and additional substrates. On-chip compact tandem couplers are used for power combining. The amplifier demonstrates 15-dB small-signal gain at 340 GHz. Peak saturated output power of 10 mW at 338 GHz is obtained at the waveguide flange out-put for the SSPA module.
Keywords :
III-V semiconductors; coplanar waveguides; high electron mobility transistors; indium compounds; millimetre wave power amplifiers; submillimetre wave amplifiers; InP; coplanar waveguide; dipole-to-waveguide transition; frequency 338 GHz; frequency 340 GHz; high electron mobility transistors; power 10 mW; submillimeter-wave solid-state power-amplifier module; Coplanar waveguide (CPW); HEMT; millimeter wave; module; monolithic microwave integrated circuit (MMIC); power amplifier;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2010.2050105
