High Mobility Bilayer Metal–Oxide Thin Film Transistors Using Titanium-Doped InGaZnO

Author

Hsiao-Hsuan Hsu ; Chun-Yen Chang ; Chun-Hu Cheng ; Shan-Haw Chiou ; Chiung-Hui Huang

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

35

Issue

1

fYear

2014

fDate

Jan. 2014

Firstpage

87

Lastpage

89

Abstract

We report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal-oxide thin-film transistor (TFT) with a low drive voltage of . Compared with conventional IGZO TFTs, the novel bilayer metal-oxide TFTs through IGZO thickness modulation can reach the lowest off current of 1.6×10^-11 A, smallest sub-threshold swing of 73 mV/decade, and highest mobility of 63 cm²/Vs, which may create the potential application for high resolution display.

Keywords

gallium compounds; indium compounds; thin film transistors; titanium; zinc compounds; InGaZnO:Ti; TFT; high mobility bilayer metal-oxide thin film transistors; high resolution display; thickness modulation; Dielectrics; Logic gates; Modulation; Performance evaluation; Thin film transistors; Threshold voltage; ${rm TiO}_{2}$; gettering; indium–gallium–zinc oxide (IGZO); mobility; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2290707

Filename

6679240