Title :
Mirror passivation of InGaAs lasers
Author :
Dutta, N.K. ; Hobson, W.S. ; Zydzik, G.J. ; de Jong, J.F. ; Parayanthal, P. ; Passlack, M. ; Chakrabarti, U.K.
Author_Institution :
Bell Labs., Lucent Technol., Murray Hill, NJ, USA
fDate :
1/30/1997 12:00:00 AM
Abstract :
The authors report a mirror passivation technique for high power 980 nm lasers. The technique involves depositing a film of gallium oxide on the facet immediately after facet cleaving. Photoluminescence measurements show that the GaAs surface covered with in situ deposited gallium oxide has two orders of magnitude higher luminescence than that for bare GaAs surface. Lasers with good aging characteristics have been fabricated
Keywords :
III-V semiconductors; ageing; gallium arsenide; indium compounds; laser mirrors; optical fabrication; passivation; protective coatings; semiconductor lasers; vacuum deposition; waveguide lasers; 980 nm; Ga2O3-GaAs; GaAs; GaAs surface; InGaAs; InGaAs lasers; aging characteristics; facet cleaving; facet coating; facet optical damage prevention; film deposition; high power lasers; luminescence; mirror passivation technique; photoluminescence measurement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970125
