DocumentCode
1507517
Title
Ultracompact Electroabsorption Modulators Based on Tunable Epsilon-Near-Zero-Slot Waveguides
Author
Lu, Zhaolin ; Zhao, Wangshi ; Shi, Kaifeng
Author_Institution
Rochester Inst. of Technol., Kate Gleason Coll. of Eng., Rochester, NY, USA
Volume
4
Issue
3
fYear
2012
fDate
6/1/2012 12:00:00 AM
Firstpage
735
Lastpage
740
Abstract
We present a promising application of epsilon-near-zero (ENZ) materials in optical modulators. When a thin ENZ film is sandwiched in a single-mode waveguide, an ENZ-slot waveguide is formed, where the absorption can be greatly enhanced. We propose electroabsorption modulators based on tunable ENZ materials and slot waveguides. Transparent conducting oxides (TCOs) may be employed as the active slot, which can be tuned between ENZ (high absorption) and epsilon-far-from-zero (low absorption) by accumulation carriers. Numerical simulation shows that over 3-dB modulation depth can be achieved in a 250-nm-long TCO-slot waveguide. The modulators have the advantages of nanoscale footprints, small insertion loss, potentially ultrahigh speed, and easy fabrication.
Keywords
electro-optical modulation; electroabsorption; nanophotonics; numerical analysis; optical losses; optical materials; optical waveguides; ENZ materials; accumulation carriers; insertion loss; numerical simulation; optical modulators; single mode waveguide; size 250 nm; transparent conducting oxides; tunable epsilon near zero slot waveguides; ultracompact electroabsorption modulators; ultrahigh speed; Absorption; Dielectric constant; Modulation; Optical waveguides; Silicon; Metamaterials; optoelectronic materials; silicon nanophotonics;
fLanguage
English
Journal_Title
Photonics Journal, IEEE
Publisher
ieee
ISSN
1943-0655
Type
jour
DOI
10.1109/JPHOT.2012.2197742
Filename
6194256
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