Title :
Selenium Segregation for Effective Schottky Barrier Height Reduction in NiGe/n–Ge Contacts
Author :
Tong, Yi ; Liu, Bin ; Lim, Phyllis Shi Ya ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
fDate :
6/1/2012 12:00:00 AM
Abstract :
In this letter, we report the demonstration of an effective electron Schottky barrier height (ΦBn) reduction technology for NiGe/n-type Germanium (n-Ge) contacts using ion implantation of selenium (Se) followed by its segregation at NiGe/n-Ge interface. Se was found to segregate at NiGe/n-Ge interface after germanide formation. Nickel monogermanide was formed using a 350°C 30-s anneal. Se segregation gives ΦBn as low as ~0.13 eV.
Keywords :
Schottky barriers; annealing; electrical contacts; elemental semiconductors; germanium; ion implantation; nickel alloys; segregation; selenium; NiGe-Ge; NiGe-n-type germanium contact; Se; annealing; effective Schottky barrier height reduction technology; electrical contact; germanide formation; ion implantation; nickel monogermanide; selenium segregation; temperature 350 degC; time 30 s; Annealing; Electron traps; Implants; Nickel; Schottky barriers; Nickel germanide (NiGe); Schottky barrier height; segregation; selenium implant;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2191760
