Title :
Broad-area photoelectrochemical etching of GaN
Author :
Youtsey, C. ; Adesida, I. ; Bulman, G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
1/30/1997 12:00:00 AM
Abstract :
A photoenhanced wet chemical etching process for GaN using KOH solution and broad-area Hg lamp illumination is demonstrated. Results are discussed for n+ GaN, non-intentionally doped GaN, and p-GaN samples
Keywords :
photoelectrochemistry; GaN; broad-area Hg lamp illumination; broad-area photoelectrochemical etching; photoenhanced wet chemical etching process; sample masking;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970121
