Title :
High-power, high-temperature operation of AlInGaAs-AlGaAs strained single-quantum-well diode lasers
Author :
Choi, H.K. ; Wang, C.A. ; Kolesar, D.F. ; Aggarwal, R.L. ; Walpole, J.N.
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
Abstract :
Strained layer AlInGaAs-AlGaAs graded-index separate-confinement heterostructure single-quantum-well diode lasers with cavity width and length of 500 and 1000 mu m, respectively, have been operated continuous-wave (CW) at heatsink temperatures up to 125 degrees C, with output power up to 4.9 W per facet and power efficiency as high as 49% measured at 10 degrees C. Promising results have been obtained in initial reliability tests on uncoated devices at heatsink temperatures of 10 and 50 degrees C.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; reliability; semiconductor junction lasers; 10 to 125 degC; 1000 micron; 4.9 W; 49 percent; 500 micron; AlInGaAs-AlGaAs; AlInGaAs-AlGaAs strained single-quantum-well diode lasers; CW operation; GRIN SCH SQW LD; III-V semiconductor; cavity length; cavity width; heatsink temperatures; high power operation; high-temperature operation; output power; power efficiency; reliability tests; uncoated devices; Atomic beams; Atomic layer deposition; Diode lasers; Gold; Power generation; Quantum well lasers; Substrates; Temperature; Threshold current; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
