Title :
GaAs vertical-cavity surface emitting lasers fabricated by reactive ion etching
Author :
Choquette, Kent D. ; Hasnain, G. ; Wang, Y.H. ; Wynn, J.D. ; Freund, R.S. ; Cho, A.Y. ; Leibenguth, R.E.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
GaAs quantum well vertical-cavity surface emitting lasers fabricated using low damage reactive ion etching are discussed. Lasers which are partially and completely etched through their structure are compared. The surface recombination velocity of exposed GaAs is not exacerbated in deep etched lasers; other loss mechanisms in shallow etched lasers have comparable impact on laser performance. Etched lasers exhibit low voltage and small differential series resistance at threshold, while devices fabricated by a combination of etching and ion implantation possess lower threshold current. It is found that reactive ion etching has little additional effect on laser operation, whereas the different device structures considered do influence laser performance.<>
Keywords :
III-V semiconductors; gallium arsenide; laser cavity resonators; semiconductor junction lasers; sputter etching; DBR laser; GaAs; GaAs vertical-cavity surface emitting lasers; GaAs-AlGaAs; III-V semiconductor; VCSEL; deep etched lasers; fabrication; laser performance; loss mechanisms; low damage; low voltage; quantum well lasers; reactive ion etching; shallow etched lasers; small differential series resistance; surface recombination velocity; threshold; Etching; Gallium arsenide; Ion implantation; Low voltage; Performance loss; Quantum well lasers; Radiative recombination; Surface emitting lasers; Surface resistance; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
