DocumentCode :
1508000
Title :
Gain saturation coefficients of strained-layer multiple quantum-well distributed feedback lasers
Author :
Yasaka, Hiroshi ; Takahata, Kiyoto ; Yamamoto, Norio ; Naganuma, Mitsuru
Author_Institution :
NTT Opto-Electron. Lab., Kanagawa, Japan
Volume :
3
Issue :
10
fYear :
1991
Firstpage :
879
Lastpage :
882
Abstract :
The gain saturation coefficients were measured for strained and unstrained multiple quantum-well distributed feedback (MQW-DFB) lasers. The gain saturation coefficient depends on the deviation of the laser´s transverse-magnetic (TM) mode gain peak wavelength from its transverse-electric (TE) mode gain peak wavelength delta lambda , which is related to the strain on the active-layer wells. The gain saturation coefficient epsilon increased with increasing compressed strain on the active-layer wells. The coefficient epsilon of the unstrained MQW DFB laser with a wavelength deviation delta lambda of -350 AA was 2.45 x 10/sup -17/ cm/sup 3/, and epsilon increased up to 12.6 x 10/sup -17/ cm/sup 3/ in the SL-MQW DFB laser with a wavelength difference delta lambda of -890 AA.
Keywords :
distributed feedback lasers; optical saturation; semiconductor junction lasers; InGaAs; InGaAsP; MQW DFB lasers; TE mode gain peak wavelength; TM mode gain peak wavelength; active-layer wells; compressed strain; gain saturation coefficients; semiconductor laser; strained-layer multiple quantum-well distributed feedback lasers; unstrained lasers; wavelength deviation; Distributed feedback devices; Gain measurement; Indium gallium arsenide; Laser feedback; Laser modes; Quantum well lasers; Semiconductor lasers; Strain measurement; X-ray lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.93248
Filename :
93248
Link To Document :
بازگشت