Title :
Refractive index change of GaInAs/InP disordered superlattice waveguide
Author :
Wakatsuki, A. ; Iwamura, H. ; Suzuki, Y. ; Miyazawa, T. ; Mikami, O.
Author_Institution :
Opto-electron. Lab., Atsugi, Japan
Abstract :
The refractive index changes of disordered superlattice waveguides were measured and evaluated. A GaInAs/InP superlattice structure grown by gas-source molecular beam epitaxy (MBE) was disordered by the Si/sub 3/N/sub 4/ cap annealing method. The measurement of the wavelength response of a Bragg grating waveguide shows that the refractive indexes of the disordered region vary gradually in accordance with the development of partial disordering. Maximum refractive index changes were -1.1*10/sup -2/ for the transverse electric mode and +6.7*10/sup -3/ for the transverse magnetic mode at 1.5 mu m wavelength.<>
Keywords :
III-V semiconductors; annealing; chemical beam epitaxial growth; diffraction gratings; gallium arsenide; indium compounds; optical waveguides; refractive index; semiconductor epitaxial layers; semiconductor superlattices; 1.5 micron; Bragg grating waveguide; GaInAs-InP superlattice; III-V semiconductors; Si/sub 3/N/sub 4/ cap annealing method; disordered region; disordered superlattice waveguides; gas-source molecular beam epitaxy; partial disordering; refractive index changes; transverse electric mode; transverse magnetic mode; wavelength response; Annealing; Bragg gratings; Indium phosphide; Optical device fabrication; Optical waveguides; Refractive index; Superlattices; Superluminescent diodes; Waveguide transitions; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
