Title :
A 5 Gb/s monolithically integrated lightwave transmitter with 1.5 mu m multiple quantum well laser and HBT driver circuit
Author :
Liou, K.-Y. ; Chandrasekhar, S. ; Dentai, A.G. ; Burrows, E.C. ; Qua, G.J. ; Joyner, C.H. ; Burrus, C.A.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
Abstract :
A multiple quantum well ridge waveguide laser at 1.5- mu m wavelength and a driver circuit comprised of four heterojunction bipolar transistors (HBTs) have been monolithically integrated on a semiinsulating InP substrate. This optoelectronic integrated circuit (OEIC) has been realized by metalorganic vapor phase epitaxy. The laser threshold current is near 20 mA. The HBT DC current gain is 40 and the unity gain cutoff frequency is 30 GHz. Pseudorandom pulsed operation of the OEIC transmitter has been demonstrated for bit rates up to 5 Gb/s.<>
Keywords :
heterojunction bipolar transistors; integrated optoelectronics; optical communication equipment; semiconductor junction lasers; semiconductor quantum wells; transmitters; 1.5 micron; 20 mA; 30 GHz; 5 Gbit/s; HBT DC current gain; HBT driver circuit; heterojunction bipolar transistors; laser threshold current; metalorganic vapor phase epitaxy; monolithically integrated lightwave transmitter; multiple quantum well ridge waveguide laser; optoelectronic integrated circuit; pseudorandom pulsed operation; semiinsulating InP substrate; unity gain cutoff frequency; Driver circuits; Epitaxial growth; Heterojunction bipolar transistors; Indium phosphide; Laser beam cutting; Optoelectronic devices; Quantum well lasers; Substrates; Transmitters; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
