The effect of body contact series resistance on SOI CMOS amplifier stages

Author

Edwards, Christopher F. ; Redman-White, William ; Tenbroek, Bernard M. ; Lee, Michael S L ; Uren, Michael J.

Author_Institution

Dept. of Electron. & Comput. Sci., Southampton Univ., UK

Volume

44

Issue

12

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

2290

Lastpage

2294

Abstract

This paper examines some implications for analogue design of using body ties as a solution to the problem of floating body effects in partially-depleted (PD) SOI technologies. Measurements on H-gate body-tied structures in a 0.7-μm SOI process indicate body-tie series resistances increasing into the MΩ region. Both circuit simulation and measurement results reveal a delayed but sharper kink effect as this resistance increases. The consequences of this effect are shown in the context of a simple amplifier configuration, resulting in severe bias-dependent degradation in the small signal gain characteristics as the body-tie resistance enters the MΩ region. It is deduced that imperfectly body tied devices may be worse for analogue design than using no body-tie at all

Keywords

CMOS analogue integrated circuits; DC amplifiers; circuit CAD; circuit analysis computing; contact resistance; integrated circuit design; silicon-on-insulator; 0.7 micron; H-gate body-tied structures; SOI CMOS amplifier stages; amplifier configuration; analogue design; bias-dependent degradation; body contact series resistance; body ties; circuit simulation; imperfectly body tied devices; kink effect; partially-depleted technology; small signal gain characteristics; Circuit simulation; Contact resistance; Coupling circuits; Degradation; Delay effects; Digital signal processing; Electrical resistance measurement; Immune system; Impact ionization; Integrated circuit modeling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.644655

Filename

644655