• DocumentCode
    1508599
  • Title

    Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFETs

  • Author

    Ling, C.H. ; Goh, Y.H.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
  • Volume
    44
  • Issue
    12
  • fYear
    1997
  • fDate
    12/1/1997 12:00:00 AM
  • Firstpage
    2309
  • Lastpage
    2311
  • Abstract
    A linear relation exists between the maximum forward gated-diode current Id and the corresponding maximum charge pumping current Icp, in a hot-carrier stressed pMOSFET. Id peak is further observed to shift by an amount equal to the shift in the rising edge of Icp. A close correspondence between the two currents is demonstrated
  • Keywords
    MOSFET; hot carriers; leakage currents; charge pumping currents; forward gated-diode current; hot-carrier stressed PMOSFETs; p-channel MOSFET; Charge pumps; Degradation; Electron traps; Hot carriers; MOSFET circuits; Pulse measurements; Silicon; Spontaneous emission; Stress; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.644662
  • Filename
    644662
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1508599