DocumentCode :
150860
Title :
Performance evaluation of a 3-level ANPC photovoltaic grid-connected inverter with 650V SiC devices and optimized PWM
Author :
Barater, Davide ; Concari, Carlo ; Buticchi, Giampaolo ; Gurpinar, Emre ; De, Debashis ; Castellazzi, Alberto
Author_Institution :
Dept. of Inf. Eng., Univ. of Parma, Parma, Italy
fYear :
2014
fDate :
14-18 Sept. 2014
Firstpage :
2233
Lastpage :
2240
Abstract :
Photovoltaic energy conversion has been on the spotlight of scientific research for several years. Special attention was paid to the grid-connected inverters that do not feature an insulation transformer (transformerless topologies). In this framework, Neutral Point Clamped inverters have gained interest due to the low ground leakage current. Recently, the research has been focused on high-efficiency MOSFET-based topologies. In this paper an Active-NPC topology is equipped with 650V ROHM SiC devices. A new modulation strategy that allows to exploit the characteristics of Sic MOSFETs, is proposed. It permits to obtain very high efficiency due to the parallel operation of the devices during the freewheeling phases of the inverter output current. Simulation and experimental results show the benefits of this choice.
Keywords :
PWM invertors; elemental semiconductors; photovoltaic power systems; power MOSFET; power grids; 3-level ANPC photovoltaic grid-connected inverter; ROHM silicon carbide devices; active-NPC topology; freewheeling phases; high-efficiency MOSFET-based topologies; inverter output current; low ground leakage current; modulation strategy; neutral point clamped inverters; optimized PWM; performance evaluation; photovoltaic energy conversion; voltage 650 V; Insulated gate bipolar transistors; Inverters; MOSFET; Pulse width modulation; Silicon carbide; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2014 IEEE
Conference_Location :
Pittsburgh, PA
Type :
conf
DOI :
10.1109/ECCE.2014.6953701
Filename :
6953701
Link To Document :
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