Title :
Magnetoresistance in spin-valves with antiferromagnetic NiO/CuO/NiO trilayers
Author :
Lee, S.S. ; Hwang, D.G. ; Park, C.M. ; Lee, K.A.
Author_Institution :
Dept. of Phys., SangJi Univ., Wonju, South Korea
fDate :
9/1/1997 12:00:00 AM
Abstract :
Magnetoresistance and exchange coupling in spin-valve films using antiferromagnetic NiO/CuO/NiO trilayers were investigated. The exchange coupling field Hex and MR ratio in the NiO300 Å /CuO300 Å/NiO300 Å/NiFe50 Å/Cu20 Å/NiFe50 Å films were almost constant values of 100 Oe and 4.5% despite of the variation of the inserted CuO thickness, however, the coercive field Hc increased from 80 Oe to 270 Oe. The apparent increase in the coercive field with the inserted thickness of CuO layer is due to the increment of interface roughness between antiferromagnetic NiO/CuO/NiO and pinned NiFe layers
Keywords :
antiferromagnetic materials; copper compounds; exchange interactions (electron); interface structure; magnetic multilayers; magnetoresistance; nickel compounds; surface topography; 200 A; 300 A; NiO-CuO-NiO; antiferromagnetic NiO/CuO/NiO trilayers; coercive field; exchange coupling; inserted CuO thickness; interface roughness; magnetoresistance; pinned NiFe layers; spin-valves; Antiferromagnetic materials; Giant magnetoresistance; Glass; Magnetic field measurement; Magnetic materials; Morphology; Physics; Sputtering; Temperature sensors; X-ray diffraction;
Journal_Title :
Magnetics, IEEE Transactions on
