DocumentCode
1508648
Title
Improved Subthreshold Swing and Gate-Bias Stressing Stability of p-Type 
Thin-Film Transistors Using a  are then fabricated and investigated. Experimental results show that a HfO<sub>2</sub>/SiO<sub>2</sub>-stacked gate dielectric can effectively improve interface properties and decrease gate-leakage current when compared with a SiO<sub>2</sub> gate dielectric. Thus, increased mobility, a decreased subthreshold swing, and enhanced gate-bias-voltage stressing stability have been achieved for the relevant Cu<sub>2</sub>O TFTs. Bottom-gate and top-source/drain-contact p-channel Cu<sub>2</sub>O TFTs (<i>W</i>/<i>L</i>= 500/20 μm) with the HfO<sub>2</sub>/SiO<sub>2</sub>-stacked gate dielectric exhibit superior performance with a saturation-carrier-mobility value of 2.7 cm<sup>2</sup>/V·s, an on-off current ratio of 1.5×10<sup>6</sup>, a subthreshold swing of 137 mV/dec, and a threshold-voltage shift of 1.4 V after gate-bias stress at 10 V for 3600 s.</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>MOS capacitors; copper compounds; hafnium compounds; high-k dielectric thin films; leakage currents; pulsed laser deposition; silicon compounds; thin film transistors; Cu<sub>2</sub>O; HfO<sub>2</sub>-SiO<sub>2</sub>; SiO<sub>2</sub>-Si; bottom-gate p-channel thin-film transistors; gate-bias-voltage stressing stability enhancement; gate-leakage current; high-k gate dielectric grown; improved subthreshold swing; interface properties; metal-oxide-semiconductor capacitors; pulsed laser ablation; size 20 mum; size 500 mum; time 3600 s; top-source-drain-contact p-channel thin-film transistors; voltage 1.4 V; voltage 10 V; Current measurement; Dielectrics; Logic gates; MOS capacitors; Temperature measurement; Thin film transistors; <formula formulatype=)
$hbox{Cu}_{2}hbox{O}$ ; $hbox{HfO}_{2}$
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2011.2142313
Filename
5762339
Link To Document