• DocumentCode
    150865
  • Title

    The impact of gate-driver parameters variation and device degradation in the PV-inverter lifetime

  • Author

    Sintamarean, C. ; Wang, Huifang ; Blaabjerg, Frede ; Iannuzzo, F.

  • Author_Institution
    Dept. of Energy Technol., Aalborg Univ., Aalborg, Denmark
  • fYear
    2014
  • fDate
    14-18 Sept. 2014
  • Firstpage
    2257
  • Lastpage
    2264
  • Abstract
    This paper introduces a reliability-oriented design tool for a new generation of grid connected PV-inverters. The proposed design tool consists of a real field Mission Profile (MP) model (for one year operation in USA-Arizona), a PV-panel model, a grid connected PV-inverter model, an Electro-Thermal model and the lifetime model of the power semiconductor devices. A simulation model able to consider a one year real field operation conditions (solar irradiance and ambient temperature) is developed. Thus, one year estimation of the converter devices thermal loading distribution is achieved and is further used as an input to a lifetime model. The proposed reliability oriented design tool is used to study the impact of MP-variation, Gate-Driver (GD) parameters variation and device degradation in the PV-inverter lifetime. The obtained results indicate that in order to improve the accuracy of the lifetime estimation it is crucial to consider also the device degradation feedback. Moreover the MP of the field where the PV-inverter is operating and the GD-parameters selection has an important impact in the converter reliability and it should be considered from the design stage to better optimize the converter design margin.
  • Keywords
    feedback; invertors; photovoltaic power systems; power semiconductor devices; reliability; Arizona; GD-parameters selection; MP-variation gate-driver parameters; PV-inverter lifetime; PV-panel model; USA; ambient temperature; converter design margin; converter devices; converter reliability; device degradation; device degradation feedback; electro-thermal model; gate-driver parameters variation; grid connected PV-inverter model; lifetime estimation; mission profile model; power semiconductor devices; reliability oriented design tool; reliability-oriented design tool; simulation model; solar irradiance; thermal loading distribution; Degradation; Estimation; Junctions; Load modeling; Logic gates; Reliability; Semiconductor device modeling; SiC-devices; device degradation feedback; gate-driver parameters variation; mission profile variation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Energy Conversion Congress and Exposition (ECCE), 2014 IEEE
  • Conference_Location
    Pittsburgh, PA
  • Type

    conf

  • DOI
    10.1109/ECCE.2014.6953704
  • Filename
    6953704