DocumentCode
150865
Title
The impact of gate-driver parameters variation and device degradation in the PV-inverter lifetime
Author
Sintamarean, C. ; Wang, Huifang ; Blaabjerg, Frede ; Iannuzzo, F.
Author_Institution
Dept. of Energy Technol., Aalborg Univ., Aalborg, Denmark
fYear
2014
fDate
14-18 Sept. 2014
Firstpage
2257
Lastpage
2264
Abstract
This paper introduces a reliability-oriented design tool for a new generation of grid connected PV-inverters. The proposed design tool consists of a real field Mission Profile (MP) model (for one year operation in USA-Arizona), a PV-panel model, a grid connected PV-inverter model, an Electro-Thermal model and the lifetime model of the power semiconductor devices. A simulation model able to consider a one year real field operation conditions (solar irradiance and ambient temperature) is developed. Thus, one year estimation of the converter devices thermal loading distribution is achieved and is further used as an input to a lifetime model. The proposed reliability oriented design tool is used to study the impact of MP-variation, Gate-Driver (GD) parameters variation and device degradation in the PV-inverter lifetime. The obtained results indicate that in order to improve the accuracy of the lifetime estimation it is crucial to consider also the device degradation feedback. Moreover the MP of the field where the PV-inverter is operating and the GD-parameters selection has an important impact in the converter reliability and it should be considered from the design stage to better optimize the converter design margin.
Keywords
feedback; invertors; photovoltaic power systems; power semiconductor devices; reliability; Arizona; GD-parameters selection; MP-variation gate-driver parameters; PV-inverter lifetime; PV-panel model; USA; ambient temperature; converter design margin; converter devices; converter reliability; device degradation; device degradation feedback; electro-thermal model; gate-driver parameters variation; grid connected PV-inverter model; lifetime estimation; mission profile model; power semiconductor devices; reliability oriented design tool; reliability-oriented design tool; simulation model; solar irradiance; thermal loading distribution; Degradation; Estimation; Junctions; Load modeling; Logic gates; Reliability; Semiconductor device modeling; SiC-devices; device degradation feedback; gate-driver parameters variation; mission profile variation;
fLanguage
English
Publisher
ieee
Conference_Titel
Energy Conversion Congress and Exposition (ECCE), 2014 IEEE
Conference_Location
Pittsburgh, PA
Type
conf
DOI
10.1109/ECCE.2014.6953704
Filename
6953704
Link To Document