DocumentCode
1508840
Title
Angular dependence of planar Hall effect of amorphous Co81 Nb19 thin film
Author
Ko, Tae-Woon ; Rhie, Kungwon ; Kim, Yak-Yoen ; Lim, Woo-Young ; Jang, Pyong-Woo
Author_Institution
Dept. of Phys., Korea Univ., Chochiwon, South Korea
Volume
33
Issue
5
fYear
1997
fDate
9/1/1997 12:00:00 AM
Firstpage
3568
Lastpage
3570
Abstract
Extra ordinary Hall resistivity, AMR and planar Hall effect were used to study Co81Nb19 thin film as a function of in-plane applied field at different angles. Negative ρ|| (H)-ρ⊥(H) is observed. The planar Hall resistivity (ρH) was studied at various angles between the current and applied field. General curve shape of ρH for each angle follows the theory of AMR, however, it is also affected by the anisotropy of the thin film. We analyzed the ρH curves, and determined the easy axis of the thin film
Keywords
Hall effect; amorphous magnetic materials; cobalt alloys; ferromagnetic materials; magnetic anisotropy; magnetic thin films; magnetoresistance; niobium alloys; Co81Nb19; amorphous Co81Nb19 thin film; angular dependence; anisotropy; planar Hall effect; Amorphous materials; Anisotropic magnetoresistance; Conductivity; Current measurement; Hall effect; Magnetic domains; Magnetic field measurement; Niobium; Sputtering; Transistors;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.619500
Filename
619500
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