• DocumentCode
    1508840
  • Title

    Angular dependence of planar Hall effect of amorphous Co81 Nb19 thin film

  • Author

    Ko, Tae-Woon ; Rhie, Kungwon ; Kim, Yak-Yoen ; Lim, Woo-Young ; Jang, Pyong-Woo

  • Author_Institution
    Dept. of Phys., Korea Univ., Chochiwon, South Korea
  • Volume
    33
  • Issue
    5
  • fYear
    1997
  • fDate
    9/1/1997 12:00:00 AM
  • Firstpage
    3568
  • Lastpage
    3570
  • Abstract
    Extra ordinary Hall resistivity, AMR and planar Hall effect were used to study Co81Nb19 thin film as a function of in-plane applied field at different angles. Negative ρ|| (H)-ρ(H) is observed. The planar Hall resistivity (ρH) was studied at various angles between the current and applied field. General curve shape of ρH for each angle follows the theory of AMR, however, it is also affected by the anisotropy of the thin film. We analyzed the ρH curves, and determined the easy axis of the thin film
  • Keywords
    Hall effect; amorphous magnetic materials; cobalt alloys; ferromagnetic materials; magnetic anisotropy; magnetic thin films; magnetoresistance; niobium alloys; Co81Nb19; amorphous Co81Nb19 thin film; angular dependence; anisotropy; planar Hall effect; Amorphous materials; Anisotropic magnetoresistance; Conductivity; Current measurement; Hall effect; Magnetic domains; Magnetic field measurement; Niobium; Sputtering; Transistors;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.619500
  • Filename
    619500