DocumentCode :
1508868
Title :
Electrical and mechanical characterisation of Si/Al ohmic contacts on diamond
Author :
Civrac, G. ; Msolli, S. ; Alexis, J. ; Dalverny, O. ; Schneider, H.
Author_Institution :
LAAS-CNRS, Univ. Toulouse, Toulouse, France
Volume :
46
Issue :
11
fYear :
2010
Firstpage :
791
Lastpage :
793
Abstract :
A new ohmic contact technology on diamond with low resistivity is presented. A Si/AI metallisation is used and leads to a 7 ?? 10-6 ??.cm2 specific contact resistivity, measured by the transfer length method. Comparison is made between this technology and the Ti/Pt/Au traditional technology. Both technologies show very good electrical, thermal and mechanical characteristics.
Keywords :
aluminium compounds; diamond; electrical resistivity; mechanical properties; ohmic contacts; silicon compounds; Al; Si; contact resistivity; diamond; electrical characterisation; mechanical characterisation; ohmic contacts;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2010.0803
Filename :
5479723
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1508868
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