• DocumentCode
    150896
  • Title

    Evaluation of commercially available SiC devices and packaging materials for operation up to 350°C

  • Author

    Hamilton, Dean ; Jennings, Michael ; Sharma, Yogesh ; Fisher, Craig ; Alatise, Olayiwola ; Mawby, Philip

  • Author_Institution
    Sch. of Eng., Univ. of Warwick, Coventry, UK
  • fYear
    2014
  • fDate
    14-18 Sept. 2014
  • Firstpage
    4381
  • Lastpage
    4387
  • Abstract
    The characteristics of commercially available silicon carbide power devices and packaging technologies have been measured up to 350°C in order to obtain their reliability and suitability for use in a hybrid electric vehicle application. Electro-thermal simulations of representative power module packaging structures, using measured conduction losses, revealed the respective temperature profiles of the devices and packaging. By correlating lifetime data found from our passive thermal cycling of candidate packaging technologies, with the magnitude and number of thermal cycles extracted from simulated temperature profiles, the lifetime of high temperature power module packages has been predicted. It was found that the limiting factor for high temperature thermal cycled operation is the silicon nitride substrate material, followed closely by the pressure-less silver sinter die attach. In this case, no aluminum wirebond failures were observed.
  • Keywords
    hybrid electric vehicles; losses; microassembling; modules; silicon compounds; silver; sintering; temperature; thermal management (packaging); wide band gap semiconductors; SiC; commercially available silicon carbide power devices; conduction losses; correlating lifetime data; electro-thermal simulations; high temperature power module packaging structures; high temperature thermal cycled operation; hybrid electric vehicle application; limiting factor; packaging material technology; passive thermal cycling; pressure-less silver sinter die attach; temperature profiles; wirebond failures; Electrical resistance measurement; Multichip modules; Silicon carbide; Substrates; Temperature; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Energy Conversion Congress and Exposition (ECCE), 2014 IEEE
  • Conference_Location
    Pittsburgh, PA
  • Type

    conf

  • DOI
    10.1109/ECCE.2014.6953720
  • Filename
    6953720