Mutual compensation of mobility and threshold voltage temperature effects with applications in CMOS circuits

Author

Filanovsky, I.M. ; Allam, Ahmed

Author_Institution

Alberta Univ., Edmonton, Alta., Canada

Volume

48

Issue

7

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

876

Lastpage

884

Abstract

Mutual compensation of mobility and threshold voltage temperature variations may result in a zero temperature coefficient bias point of a MOS transistor. The conditions under which this effect occurs, and stability of this bias point are investigated. Possible applications of this effect include voltage reference circuits and temperature sensors with linear dependence of voltage versus temperature. The theory is verified experimentally investigating the temperature behavior of a simple voltage reference circuit realized in 0.35 μm CMOS process

Keywords

CMOS integrated circuits; carrier mobility; circuit stability; compensation; integrated circuit design; reference circuits; temperature sensors; 0.35 mum; CMOS circuits; MOS transistor; bias point stability; mobility temperature effects; mutual compensation; temperature sensors; threshold voltage temperature effects; voltage reference circuits; voltage versus temperature linear dependence; zero temperature coefficient bias point; CMOS process; CMOS technology; Circuit stability; FETs; MOSFETs; Temperature dependence; Temperature distribution; Temperature sensors; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on

Publisher

ieee

ISSN

1057-7122

Type

jour

DOI

10.1109/81.933328

Filename

933328