Title :
Mutual compensation of mobility and threshold voltage temperature effects with applications in CMOS circuits
Author :
Filanovsky, I.M. ; Allam, Ahmed
Author_Institution :
Alberta Univ., Edmonton, Alta., Canada
fDate :
7/1/2001 12:00:00 AM
Abstract :
Mutual compensation of mobility and threshold voltage temperature variations may result in a zero temperature coefficient bias point of a MOS transistor. The conditions under which this effect occurs, and stability of this bias point are investigated. Possible applications of this effect include voltage reference circuits and temperature sensors with linear dependence of voltage versus temperature. The theory is verified experimentally investigating the temperature behavior of a simple voltage reference circuit realized in 0.35 μm CMOS process
Keywords :
CMOS integrated circuits; carrier mobility; circuit stability; compensation; integrated circuit design; reference circuits; temperature sensors; 0.35 mum; CMOS circuits; MOS transistor; bias point stability; mobility temperature effects; mutual compensation; temperature sensors; threshold voltage temperature effects; voltage reference circuits; voltage versus temperature linear dependence; zero temperature coefficient bias point; CMOS process; CMOS technology; Circuit stability; FETs; MOSFETs; Temperature dependence; Temperature distribution; Temperature sensors; Threshold voltage; Transconductance;
Journal_Title :
Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on
