Dielectric properties of holmium oxide films

Author

Wiktorczyk, T. ; Nitsch, K.

Author_Institution

Inst. of Phys., Wroclaw Univ. of Technol., Poland

Volume

8

Issue

3

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

447

Lastpage

453

Abstract

Results of dielectric studies of electron-beam deposited holmium oxide thin films, examined in metal/insulator/metal (MIM) structures, are reported. The frequency domain characteristics of the capacitance, dielectric loss and complex impedance have been estimated from the time domain measurements of the charging and discharging currents. The influence of the voltage on the dielectric characteristics at 430 K has been tested. Experimental results clearly show that the dielectric response in the frequency range from 100 kHz to 20 Hz comes from the insulating film of Ho₂O₃ as well as from metal-insulator interfaces. The capacitance and resistance of Ho₂O₃ film and Al-Ho₂O₃ regions have been determined

Keywords

MIM structures; capacitance; dielectric losses; dielectric thin films; electrical resistivity; frequency-domain analysis; holmium compounds; time-domain analysis; 20 Hz to 100 muHz; 430 K; Al-Ho₂O₃; Ho₂O₃; MIM structures; capacitance; charging current; complex impedance; dielectric loss; dielectric properties; dielectric response; discharging currents; electron-beam deposited holmium oxide thin films; frequency domain characteristics; holmium oxide films; metal-insulator interfaces; metal/insulator/metal structures; resistance; time domain measurements; Capacitance-voltage characteristics; Dielectric films; Dielectric loss measurement; Dielectric losses; Dielectric thin films; Dielectrics and electrical insulation; Frequency domain analysis; Impedance; Metal-insulator structures; Sputtering;

fLanguage

English

Journal_Title

Dielectrics and Electrical Insulation, IEEE Transactions on

Publisher

ieee

ISSN

1070-9878

Type

jour

DOI

10.1109/94.933363

Filename

933363