Title :
Dielectric properties of holmium oxide films
Author :
Wiktorczyk, T. ; Nitsch, K.
Author_Institution :
Inst. of Phys., Wroclaw Univ. of Technol., Poland
fDate :
6/1/2001 12:00:00 AM
Abstract :
Results of dielectric studies of electron-beam deposited holmium oxide thin films, examined in metal/insulator/metal (MIM) structures, are reported. The frequency domain characteristics of the capacitance, dielectric loss and complex impedance have been estimated from the time domain measurements of the charging and discharging currents. The influence of the voltage on the dielectric characteristics at 430 K has been tested. Experimental results clearly show that the dielectric response in the frequency range from 100 kHz to 20 Hz comes from the insulating film of Ho2O3 as well as from metal-insulator interfaces. The capacitance and resistance of Ho2 O3 film and Al-Ho2O3 regions have been determined
Keywords :
MIM structures; capacitance; dielectric losses; dielectric thin films; electrical resistivity; frequency-domain analysis; holmium compounds; time-domain analysis; 20 Hz to 100 muHz; 430 K; Al-Ho2O3; Ho2O3; MIM structures; capacitance; charging current; complex impedance; dielectric loss; dielectric properties; dielectric response; discharging currents; electron-beam deposited holmium oxide thin films; frequency domain characteristics; holmium oxide films; metal-insulator interfaces; metal/insulator/metal structures; resistance; time domain measurements; Capacitance-voltage characteristics; Dielectric films; Dielectric loss measurement; Dielectric losses; Dielectric thin films; Dielectrics and electrical insulation; Frequency domain analysis; Impedance; Metal-insulator structures; Sputtering;
Journal_Title :
Dielectrics and Electrical Insulation, IEEE Transactions on
