DocumentCode :
1509253
Title :
Effect of interface on coupling of NiFeCo/TaN/NiFeCo sandwich films
Author :
Yeh, T. ; Swanson, D. ; Berg, L. ; Karn, P.
Author_Institution :
Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA
Volume :
33
Issue :
5
fYear :
1997
fDate :
9/1/1997 12:00:00 AM
Firstpage :
3631
Lastpage :
3633
Abstract :
Coupled NiFeCo/TaN/NiFeCo films with coercivity of 0.42 and 5.94 Oe were obtained by varying the substrate bias conditions of the NiFeCo films. The film with low coercivity had a sharp magnetization reversal process, i.e. small switching field distribution. On the other hand, a large switching field distribution, approximately 3.5 Oe, was found on the sample film with high coercivity. Such different magnetic characteristic may be attributed to altering the domain wall energy associated with induced coupling at NiFeCo/TaN interface due to pit formation in the NiFeCo film
Keywords :
cobalt alloys; coercive force; ferromagnetic materials; interface magnetism; iron alloys; magnetic domain walls; magnetic switching; magnetic thin films; magnetisation reversal; nickel alloys; permanent magnets; soft magnetic materials; tantalum compounds; NiFeCo films; NiFeCo-TaN-NiFeCo; NiFeCo/TaN interface; NiFeCo/TaN/NiFeCo sandwich films; coercivity; coupled NiFeCo/TaN/NiFeCo films; coupling; domain wall energy; high coercivity; induced coupling; interface; large switching field distribution; low coercivity; pit formation; sharp magnetization reversal process; small switching field distribution; substrate bias conditions; Coercive force; Couplings; Magnetic domain walls; Magnetic films; Magnetic properties; Magnetic separation; Magnetization reversal; Magnetostatics; Nonvolatile memory; Substrates;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.619520
Filename :
619520
Link To Document :
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