DocumentCode
1509561
Title
High-efficiency thin-film light-emitting diodes at 650 nm
Author
Rooman, C. ; Windisch, R. ; D´Hondt, M. ; Dutta, B. ; Modak, P. ; Mijlemans, P. ; Borghs, G. ; Vounckx, R. ; Moerman, I. ; Kuijk, M. ; Heremans, P.
Author_Institution
IMEC, Leuven, Belgium
Volume
37
Issue
13
fYear
2001
fDate
6/21/2001 12:00:00 AM
Firstpage
852
Lastpage
853
Abstract
The first surface-textured thin-film GaInP-AlGaInP light-emitting diodes operating at a wavelength of 650 nm are presented. Unencapsulated devices reach an external quantum efficiency of 24%, which is further increased to 31% by encapsulation. The optical output power is 4 mW at a current of 7 mA
Keywords
III-V semiconductors; encapsulation; gallium compounds; indium compounds; light emitting diodes; optical films; semiconductor device packaging; 24 percent; 31 percent; 4 mW; 650 nm; 7 mA; GaInP-AlGaInP; GaInP-AlGaInP light-emitting diodes; encapsulation; external quantum efficiency; optical output power; surface-textured; thin-film; thin-film light-emitting diodes; unencapsulated devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20010549
Filename
933419
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