Author :
Rooman, C. ; Windisch, R. ; D´Hondt, M. ; Dutta, B. ; Modak, P. ; Mijlemans, P. ; Borghs, G. ; Vounckx, R. ; Moerman, I. ; Kuijk, M. ; Heremans, P.
Abstract :
The first surface-textured thin-film GaInP-AlGaInP light-emitting diodes operating at a wavelength of 650 nm are presented. Unencapsulated devices reach an external quantum efficiency of 24%, which is further increased to 31% by encapsulation. The optical output power is 4 mW at a current of 7 mA
Keywords :
III-V semiconductors; encapsulation; gallium compounds; indium compounds; light emitting diodes; optical films; semiconductor device packaging; 24 percent; 31 percent; 4 mW; 650 nm; 7 mA; GaInP-AlGaInP; GaInP-AlGaInP light-emitting diodes; encapsulation; external quantum efficiency; optical output power; surface-textured; thin-film; thin-film light-emitting diodes; unencapsulated devices;
