Title :
A universal dual band LNA implementation in SiGe technology for wireless applications
Author :
Schmidt, Axel ; Catala, Stéphane
Author_Institution :
Infineon Technol. AG, Munich, Germany
fDate :
7/1/2001 12:00:00 AM
Abstract :
A dual band low-noise amplifier (LNA) with matched inputs and outputs, implemented in Infineon Technologies´ B7HF SiGe process, is presented. Both the single-ended inputs and outputs are matched to 50 Ω without external elements. For the low-band (800 MHz-1 GHz), the LNA has a measured gain of 17 dB and a noise figure below 1.2 dB at 900 MHz. The high-band (1.8-2 GHz) LNA achieves a gain of 15 dB and a noise figure below 1.5 dB at 1.9 GHz. Both LNAs consume 5 mA dc current with a power supply voltage range from 2.7-3.6 V
Keywords :
Ge-Si alloys; UHF amplifiers; UHF integrated circuits; bipolar analogue integrated circuits; cellular radio; integrated circuit noise; semiconductor materials; 1.2 to 1.5 dB; 15 to 17 dB; 2.7 to 3.6 V; 5 mA; 800 MHz to 2 GHz; B7HF SiGe process; Infineon Technologies; LNA implementation; SiGe; SiGe bipolar technology; low-noise amplifier; matched inputs; matched outputs; single-ended inputs; single-ended outputs; universal dual band LNA; wireless applications; Dual band; Gain measurement; Germanium silicon alloys; Impedance matching; Low-noise amplifiers; Noise figure; Noise measurement; Power supplies; Silicon germanium; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
