Title :
A high-IP3 RF receiver chip set for mobile radio base stations up to 2 GHz
Author :
Wohlmuth, Hans-Dieter ; Simbürger, Werner
Author_Institution :
Infineon Technol., Munich, Germany
fDate :
7/1/2001 12:00:00 AM
Abstract :
We present a monolithically integrated high third-order intercept point (IP3) radio frequency (RF) receiver chip set for mobile radio base stations up to 2 GHz, in a 25-GHz fT Si bipolar production technology. The chip set consists of a RF preamplifier, active mixer circuits, and an intermediate frequency (IF) limiter. The preamplifier gain is 12 dB, the noise figure is 5.5 dB at 900 MHz, and the output (OIP3) is up to +24 dBm depending on supply voltage. The two different mixers provide a conversion gain of 1.5 dB up to 3 dB, an OIP3 in the range of +21 dBm up to +29 dBm, and a minimal single sideband (SSB) noise figure of 13 dB. The IF limiter shows an excellent limiting characteristic at 10 dBm output power and has a high bandwidth of more than 1 GHz
Keywords :
UHF amplifiers; UHF integrated circuits; UHF mixers; bipolar analogue integrated circuits; elemental semiconductors; limiters; mobile radio; preamplifiers; radio receivers; silicon; 1 GHz; 1.5 to 3 dB; 12 dB; 13 dB; 25 GHz; 5.5 dB; 900 MHz to 2 GHz; IF limiter; RF preamplifier; SSB noise figure; Si; Si bipolar production technology; active mixer circuits; high-IP3 RF receiver chip set; intermediate frequency limiter; mobile radio base stations; third-order intercept point; Base stations; Gain; Integrated circuit technology; Land mobile radio; Mixers; Noise figure; Preamplifiers; Production; Radio frequency; Receivers;
Journal_Title :
Solid-State Circuits, IEEE Journal of
