SiC full-bridge grid-tied inverter with ZVS-switching

Author

Guangcheng Hu ; Yawen Li ; Yenan Chen ; Min Chen ; Dehong Xu ; Arita, Yoshihiko ; Igarashi, Seiki ; Fujihira, T.

Author_Institution

Inst. of Power Electron., Zhejiang Univ., Hangzhou, China

fYear

2014

fDate

14-18 Sept. 2014

Firstpage

2773

Lastpage

2780

Abstract

Although SiC MOSFET has significant improvements on switching performance compared with traditional Si power devices, the dynamic loss of the converter rises with the increase of the switching frequency of the converter. To further improve the efficiency of SiC inverter and power density, Zero-Voltage-Switching (ZVS) is investigated. A SiC full-bridge inverter with ZVS-switching is presented. The efficiency of SiC MOSFET ZVS full-bridge inverter is compared with that of hard switching SiC inverter at different switching frequency. Finally it is shown that the ZVS-Switching inverter is preferred in high switching frequency.

Keywords

bridge circuits; invertors; power MOSFET; power grids; semiconductor device testing; silicon compounds; switching convertors; wide band gap semiconductors; zero voltage switching; MOSFET; Si; SiC; ZVS; full-bridge grid-tied inverter; power density; power devices; switching frequency; switching inverter; zero voltage switching; Inverters; MOSFET; Silicon; Silicon carbide; Switches; Switching frequency; Zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2014 IEEE

Conference_Location

Pittsburgh, PA

Type

conf

DOI

10.1109/ECCE.2014.6953774

Filename

6953774