Title :
Analysis of stray inductance´s influence on SiC MOSFET switching performance
Author :
Zhaohui Wang ; Junming Zhang ; Xinke Wu ; Kuang Sheng
Author_Institution :
Coll. of Electr. Eng., Zhejiang Univ., Hangzhou, China
Abstract :
This paper mainly discusses the influence of stray inductance on the switching performance of SiC MOSFET. For package with three leads, stray inductance at the source electrode is shared by the driving path and power path, which can reduce the switching speed and lead to increased power loss. A double pulse test bench is designed to verify the analysis. Based on the test bench, a direct bond copper substrate is designed to eliminate the shared inductance.
Keywords :
field effect transistor switches; inductance; semiconductor device testing; silicon compounds; wide band gap semiconductors; MOSFET switching performance; SiC; direct bond copper substrate; double pulse test bench; metal-oxide-semiconductor field-effect transistor; power loss; silicon carbide; source electrode; stray inductance analysis; switching speed reduction; Capacitors; Inductance; Logic gates; MOSFET; Silicon carbide; Switches; Transient analysis;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2014 IEEE
Conference_Location :
Pittsburgh, PA
DOI :
10.1109/ECCE.2014.6953783
