DocumentCode
151021
Title
Analysis of stray inductance´s influence on SiC MOSFET switching performance
Author
Zhaohui Wang ; Junming Zhang ; Xinke Wu ; Kuang Sheng
Author_Institution
Coll. of Electr. Eng., Zhejiang Univ., Hangzhou, China
fYear
2014
fDate
14-18 Sept. 2014
Firstpage
2838
Lastpage
2843
Abstract
This paper mainly discusses the influence of stray inductance on the switching performance of SiC MOSFET. For package with three leads, stray inductance at the source electrode is shared by the driving path and power path, which can reduce the switching speed and lead to increased power loss. A double pulse test bench is designed to verify the analysis. Based on the test bench, a direct bond copper substrate is designed to eliminate the shared inductance.
Keywords
field effect transistor switches; inductance; semiconductor device testing; silicon compounds; wide band gap semiconductors; MOSFET switching performance; SiC; direct bond copper substrate; double pulse test bench; metal-oxide-semiconductor field-effect transistor; power loss; silicon carbide; source electrode; stray inductance analysis; switching speed reduction; Capacitors; Inductance; Logic gates; MOSFET; Silicon carbide; Switches; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Energy Conversion Congress and Exposition (ECCE), 2014 IEEE
Conference_Location
Pittsburgh, PA
Type
conf
DOI
10.1109/ECCE.2014.6953783
Filename
6953783
Link To Document