An X-band high-power amplifier using SiGe/Si HBT and lumped passive components

Author

Ma, Zhenqiang ; Mohammadi, Saeed ; Lu, Liang-Hung ; Bhattacharya, Pallab ; Katehi, Linda P B ; Alterovitz, Samuel A. ; Ponchak, George E.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

11

Issue

7

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

287

Lastpage

289

Abstract

We report the design and fabrication of a compact microwave monolithic integrated circuit (MMIC) amplifier, which demonstrates high output power at X-Band. A single-stage power amplifier is demonstrated, with a double-mesa type SiGe/Si HBT as the active device and spiral inductors and MIM capacitors as lumped passive components. At 8.4 GHz, a linear gain of 8.7 dB, an output power at peak efficiency of 23 dBm, and a saturated output power P/sub sat/ of 25 dBm, are measured. To our knowledge, this is the first MMIC X-Band power amplifier using SiGe/Si HBTs.

Keywords

Ge-Si alloys; MIM devices; MMIC power amplifiers; bipolar MMIC; elemental semiconductors; inductors; semiconductor materials; silicon; 8.4 GHz; 8.7 dB; HBT; MIM capacitors; MMIC amplifier; SiGe-Si; X-band; high-power amplifier; linear gain; lumped passive components; output power; peak efficiency; saturated output power; single-stage power amplifier; spiral inductors; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; MMICs; Microwave devices; Monolithic integrated circuits; Power amplifiers; Power generation; Silicon germanium;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/7260.933773

Filename

933773