DocumentCode :
1510310
Title :
A 7.27 GHz 
-Enhanced Low Noise Amplifier RFIC With 70 dB Image Rejection Ratio
Author :
Ma, Desheng ; Dai, Fa Foster
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., Auburn, AL, USA
Volume :
20
Issue :
8
fYear :
2010
Firstpage :
456
Lastpage :
458
Abstract :
This letter presents a low noise amplifier (LNA) RFIC with notch filter implemented in a 0.13 μm SiGe BiCMOS technology. The LNA/filter combination utilizes Q-enhanced techniques to achieve a high gain and high image rejection ratio (IRR) simultaneously. The amplifier operates at 7.27 GHz and achieves 22.5 dB gain with an IIR of 70 dB. The measured noise figure and IIP3 of the LNA are better than 5.1 dB and -13 dBm, respectively. The LNA dissipates 21 mW power with a 1.7 V supply.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; IIR filters; low noise amplifiers; notch filters; radiofrequency integrated circuits; BiCMOS technology; LNA; Q-enhanced low noise amplifier RFIC; frequency 7.27 GHz; gain 22.5 dB; image rejection ratio; noise figure 70 dB; power 21 mW; voltage 1.7 V; ${rm Q}$ -enhanced; BiCMOS technology; image rejection ratio (IRR); low noise amplifier (LNA); notch filter;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2010.2050301
Filename :
5481964
Link To Document :
