Title :
The next generation 6.5kV IGBT
Author :
Donlon, John F. ; Motto, Eric R. ; Wiesner, Eugen ; Thal, Eckhard ; Hatori, Kenji ; Sakai, Yoshiki ; Kitamura, S. ; Motomiya, Tetsuo ; Ota, Kaoru ; Kitajima, Yasuko ; Iura, Shinichi ; Yamaguchi, Hitoshi ; Kurachi, Kazuhiro
Author_Institution :
Powerex, Inc., Youngwood, PA, USA
Abstract :
This paper introduces the next (7th) generation 6.5kV chip set, IGBT and FWDi, for high voltage IGBT (HVIGBT) modules. New technologies for both the IGBT and FWD chips are adopted to increase the current rating while maintaining high robustness and package compatibility. These technologies achieve successful turn off of 4400A at 4.4 times rated nominal current (IC(nom)) confirming that the rating of the new 6.5kV module can be increased to 1000A from the 750A rating of the conventional module while maintaining high robustness and operating margin.
Keywords :
insulated gate bipolar transistors; power transistors; FWDi; HVIGBT; current 1000 A; current 4400 A; current 750 A; current rating; high voltage IGBT; insulated gate bipolar transistors; voltage 6.5 kV; Insulated gate bipolar transistors; Next generation networking; Robustness; Semiconductor optical amplifiers; Temperature dependence; Temperature distribution;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2014 IEEE
Conference_Location :
Pittsburgh, PA
DOI :
10.1109/ECCE.2014.6953792
