A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations

Author

Rui Wu ; Huai Wang ; Ke Ma ; Ghimire, Pramod ; Iannuzzo, F. ; Blaabjerg, Frede

Author_Institution

Dept. of Energy Technol., Aalborg Univ., Aalborg, Denmark

fYear

2014

fDate

14-18 Sept. 2014

Firstpage

2901

Lastpage

2908

Abstract

Thermal impedance of IGBT modules may vary with operating conditions due to that the thermal conductivity and heat capacity of materials are temperature dependent. This paper proposes a Cauer thermal model for a 1700 V/1000 A IGBT module with temperature-dependent thermal resistances and thermal capacitances. The temperature effect is investigated by Finite Element Method (FEM) simulation based on the geometry and material information of the IGBT module. The developed model is ready for circuit-level simulation to achieve an improved accuracy of the estimation on IGBT junction temperature and its relevant reliability aspect performance. A test bench is built up with an ultra-fast infrared (IR) camera to validate the proposed thermal impedance model.

Keywords

finite element analysis; insulated gate bipolar transistors; power bipolar transistors; semiconductor device models; semiconductor device reliability; thermal conductivity; thermal resistance; Cauer thermal model; FEM; IGBT modules; circuit-level simulation; current 1000 A; finite element method; heat capacity; insulated gate bipolar transistors; reliability aspect performance; temperature dependent thermal model; thermal capacitance; thermal conductivity; thermal impedance model; thermal resistance; ultra-fast infrared camera; voltage 1700 V; Finite element analysis; Impedance; Insulated gate bipolar transistors; Integrated circuit modeling; Temperature; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2014 IEEE

Conference_Location

Pittsburgh, PA

Type

conf

DOI

10.1109/ECCE.2014.6953793

Filename

6953793