DocumentCode :
1510628
Title :
CMOS-Integrated Optical Receivers for On-Chip Interconnects
Author :
Assefa, Solomon ; Xia, Fengnian ; Green, William M J ; Schow, Clint L. ; Rylyakov, Alexander V. ; Vlasov, Yurii A.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
16
Issue :
5
fYear :
2010
Firstpage :
1376
Lastpage :
1385
Abstract :
This paper reviews recent progress on CMOS-integrated optical receivers for on-chip interconnects, which have become attractive for achieving communication bandwidth well beyond terabit-per-second with low-power consumption. The design of optical receivers and the performance metrics required from the photodetector (PD) for a low-power receiver is discussed. The progress in waveguide-integrated germanium PDs is reviewed in depth by exploring various optical/electrical designs, and the associated integration approaches for Ge films and metal contacts. The impact of design and integration on PD performance is evaluated by comparing reported results. Finally, the challenges of monolithic integration of PDs within standard CMOS process are discussed.
Keywords :
CMOS integrated circuits; germanium; integrated optoelectronics; optical communication; optical interconnections; optical receivers; photodetectors; CMOS-integrated optical receiver; Ge film; low-power receiver; metal contact; monolithic integration; on-chip interconnect; photodetector; waveguide-integrated germanium; Bandwidth; Germanium; Integrated optics; Measurement; Optical design; Optical films; Optical interconnections; Optical receivers; Optical waveguides; Photodetectors; Integrated optoelectronics; monolithic integration; on-chip interconnects; optical communications; optical receivers; photodetectors (PDs); waveguide-integrated PDs;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2010.2048306
Filename :
5482019
Link To Document :
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