مرکز منطقه ای اطلاع رساني علوم و فناوري - Improved Capacitance Density and Reliability of High-<formula formulatype="inline"> <img src="/images/tex/19359.gif" alt=" \\kappa "> </formula> <formula formulatype="inline"> <img src="/images/tex/19360.gif" alt="\\hbox {Ni}/\\hbox {ZrO}

Title :

Improved Capacitance Density and Reliability of High- $\\kappa$ $\\hbox {Ni}/\\hbox {ZrO}_{2}/\\hbox {TiN}</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Tsai, C.Y. ; Chiang, K.C. ; Lin, S.H. ; Hsu, K.C. ; Chi, C.C. ; Chin, Albert</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Electron. Eng. Dept., Nat. Chiao Tung Univ., Hsinchu, Taiwan</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>31</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>7</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2010</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fDate : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>7/1/2010 12:00:00 AM</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>749</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>751</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>We have fabricated high-κ Ni/ZrO<sub>2</sub>/TiN metal-insulator-metal capacitors with a very high 52-fF/μm<sup>2</sup> capacitance density, a low leakage current of 1.6 × 10<sup>-7</sup>A/cm<sup>2</sup>, and good ten-year reliability with a small ΔC/C of 1.7% at 2 V. From X-ray diffraction measurements, laser annealing can improve the permittivity of ZrO<sub>2</sub> due to tetragonal-phase formation which in turn helps enhance capacitance density and reliability. Such excellent device integrity is attributed to the combination of enhanced ZrO<sub>2</sub> tetragonal phase by laser annealing, high work-function Ni electrode, and good bottom-interface treatment.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>MIM devices; X-ray diffraction; laser beam annealing; X-ray diffraction measurement; capacitance density; kigh-κ Ni/ZrO2/TiN MIM capacitors; laser annealing; laser-annealing technique; metal-insulator-metal capacitors; reliability; tetragonal-phase formation; <formula formulatype=$ $hbox{ZrO}_{2}$; High-$kappa$; laser annealing; metal–insulator–metal (MIM); reliability;