Title :
Bonding of nitride based LEDs on tin oxide templates for advanced optoelectronic devices
Author :
Simeonov, D. ; Tsai, M.Y. ; Chen, Huan Ting ; Weisbuch, C. ; Speck, J.
Author_Institution :
Mater. Dept., Univ. of California, Santa Barbara, CA, USA
Abstract :
A process for fabrication of flip chip LEDs based on SnO2-GaN wafer bonding is reported. Typical LED characteristics have been measured and no detrimental effect of the bonding interface has been observed. The forward voltage at 20 mA is 3.96 V and differential resistance at 100 mA is as low as 16 Ω.
Keywords :
III-V semiconductors; flip-chip devices; gallium compounds; light emitting diodes; tin compounds; wafer bonding; SnO2-GaN; advanced optoelectronic devices; bonding interface; current 100 mA; current 20 mA; flip chip light emitting diodes; voltage 3.96 V; wafer bonding;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.0514
