DocumentCode
1511006
Title
Impact of Individual Charged Gate-Oxide Defects on the Entire 
– 
Characteri
Author
Franco, Jacopo ; Kaczer, Ben ; Toledano-Luque, María ; Bukhori, Muhammad Faiz ; Roussel, Philippe J. ; Grasser, Tibor ; Asenov, Asen ; Groeseneken, Guido
Author_Institution
Imec, Leuven, Belgium
Volume
33
Issue
6
fYear
2012
fDate
6/1/2012 12:00:00 AM
Firstpage
779
Lastpage
781
Abstract
The measurement of the entire ID-VG characteristic of a nanoscaled pMOSFET before and after the capture of a single elementary charge in a gate-oxide defect is demonstrated. The impact of a single trapped carrier on the device characteristics is compared with 3-D atomistic device simulations. The ID-VG behavior is identified to depend on the location of the oxide defect with respect to the critical spot of the current percolation path in the channel.
Keywords
MOSFET; nanoelectronics; semiconductor device models; 3D atomistic device simulations; critical spot; current percolation path; device characteristics; individual charged gate-oxide defects; nanoscaled FET; nanoscaled pMOSFET; single elementary charge; single trapped carrier; Atomic measurements; FETs; Logic gates; MOSFET circuits; Nanoscale devices; Semiconductor process modeling; Nanoscale; negative bias temperature instability (NBTI); pMOSFET; reliability; time-dependent variability;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2012.2192410
Filename
6196171
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