DocumentCode :
1511035
Title :
Submicrometer Process and RF Operation of InAs Quantum Hot-Electron Transistors
Author :
Van, H. Nguyen ; Moreno, J.C. ; Baranov, A.N. ; Teissier, R. ; Zaknoune, M.
Author_Institution :
Inst. d´´Electron. du Sud, Univ. Montpellier 2, Montpellier, France
Volume :
33
Issue :
6
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
797
Lastpage :
799
Abstract :
The fabrication process of a hot-electron unipolar transistor with vertical transport based on InAs material is reported. Devices with an emitter width of 0.3 μm are fabricated and characterized. This submicrometer geometry allowed suppressing parasitic resistances and achieving high-current densities required for high-frequency operation. For the first time, for a hot-electron transistor, RF performances were achieved at room temperature. Cutoff frequencies of ft = 75 GHz and fmax = 88 GHz were obtained on devices transferred on an insulating substrate.
Keywords :
geometry; hot electron transistors; indium compounds; InAs; RF operation; fabrication process; hot-electron unipolar transistor; parasitic resistance; quantum hot-electron transistors; submicrometer geometry; submicrometer process; Junctions; Radio frequency; Resistance; Substrates; Superlattices; Temperature measurement; Transistors; High frequency; InAs; hot-electron transistor (HET);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2192409
Filename :
6196175
Link To Document :
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