Title :
Submicrometer Process and RF Operation of InAs Quantum Hot-Electron Transistors
Author :
Van, H. Nguyen ; Moreno, J.C. ; Baranov, A.N. ; Teissier, R. ; Zaknoune, M.
Author_Institution :
Inst. d´´Electron. du Sud, Univ. Montpellier 2, Montpellier, France
fDate :
6/1/2012 12:00:00 AM
Abstract :
The fabrication process of a hot-electron unipolar transistor with vertical transport based on InAs material is reported. Devices with an emitter width of 0.3 μm are fabricated and characterized. This submicrometer geometry allowed suppressing parasitic resistances and achieving high-current densities required for high-frequency operation. For the first time, for a hot-electron transistor, RF performances were achieved at room temperature. Cutoff frequencies of ft = 75 GHz and fmax = 88 GHz were obtained on devices transferred on an insulating substrate.
Keywords :
geometry; hot electron transistors; indium compounds; InAs; RF operation; fabrication process; hot-electron unipolar transistor; parasitic resistance; quantum hot-electron transistors; submicrometer geometry; submicrometer process; Junctions; Radio frequency; Resistance; Substrates; Superlattices; Temperature measurement; Transistors; High frequency; InAs; hot-electron transistor (HET);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2192409