DocumentCode :
151149
Title :
100 MHz, 20 V, 90% efficient synchronous buck converter with integrated gate driver
Author :
Yuanzhe Zhang ; Rodriguez, M. ; Maksimovic, Dragan
Author_Institution :
Dept. of Electr., Univ. of Colorado, Boulder, CO, USA
fYear :
2014
fDate :
14-18 Sept. 2014
Firstpage :
3664
Lastpage :
3671
Abstract :
This paper describes a synchronous buck converter based on a GaN-on-SiC integrated circuit, which includes a halfbridge power stage, as well as a modified active pull-up gate driver stage. The integrated modified active pull-up driver takes advantage of depletion-mode device characteristics to achieve fast switching with low power consumption. Design principles and results are presented for a synchronous buck converter prototype operating at 100 MHz switching frequency, delivering up to 7 W from 20 V input voltage. Measured power-stage efficiency peaks above 91%, and remains above 85% over a wide range of operating conditions. Experimental results show that the converter has the ability to accurately track a 20 MHz bandwidth LTE envelope signal with 83.7% efficiency.
Keywords :
III-V semiconductors; driver circuits; gallium compounds; integrated circuits; low-power electronics; power consumption; silicon compounds; switching convertors; wide band gap semiconductors; GaN-SiC; GaN-on-SiC integrated circuit; LTE envelope signal; bandwidth 20 MHz; depletion-mode device characteristics; efficiency 83.7 percent; efficiency 90 percent; frequency 100 MHz; halfbridge power stage; integrated gate driver; integrated modified active pull-up driver; low power consumption; modified active pull-up gate driver stage; switching frequency; synchronous buck converter; voltage 20 V; Gallium nitride; HEMTs; Integrated circuits; Logic gates; Switches; Switching frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2014 IEEE
Conference_Location :
Pittsburgh, PA
Type :
conf
DOI :
10.1109/ECCE.2014.6953899
Filename :
6953899
Link To Document :
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