DocumentCode
1511580
Title
Models and algorithms for bounds on leakage in CMOS circuits
Author
Johnson, Mark C. ; Somasekhar, Dinesh ; Roy, Kaushik
Author_Institution
Dept. of Electr. & Comput. Eng., Rose-Hulman Inst. of Technol., Terre Haute, IN, USA
Volume
18
Issue
6
fYear
1999
fDate
6/1/1999 12:00:00 AM
Firstpage
714
Lastpage
725
Abstract
Subthreshold leakage current in deep submicron MOS transistors is becoming a significant contributor to power dissipation in CMOS circuits as threshold voltages and channel lengths are reduced. Consequently, estimation of leakage current and identification of minimum and maximum leakage conditions are becoming important, especially in low power applications. In this paper we outline methods for estimating leakage at the circuit level and then propose heuristic and exact algorithms to accomplish the same task for random combinational logic. In most cases the heuristic is found to obtain bounds on leakage that are close and often identical to bounds determined by a complete branch and bound search. Methods are also demonstrated to show how estimation accuracy can be traded off against execution time. The proposed algorithms have potential application in power management applications or quiescent current (IDDQ) testing if one wished to control leakage by application of appropriate input vectors. For a variety of benchmark circuits, leakage was found to vary by as much as a factor of six over the space of possible input vectors
Keywords
CMOS digital integrated circuits; VLSI; integrated circuit modelling; integrated circuit testing; leakage currents; logic testing; low-power electronics; CMOS circuits; benchmark circuits; branch and bound search; channel lengths; circuit level; deep submicron MOS transistors; exact algorithms; execution time; heuristic algorithms; input vectors; low power applications; power dissipation; power management applications; quiescent current; random combinational logic; subthreshold leakage current; threshold voltages; Circuit testing; Combinational circuits; Energy management; Heuristic algorithms; Leakage current; MOSFETs; Power dissipation; Semiconductor device modeling; Subthreshold current; Threshold voltage;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/43.766723
Filename
766723
Link To Document