• DocumentCode
    1511594
  • Title

    Comparative Study of Microwave Radiation-Induced Magnetoresistance Oscillations in GaAs/AlGaAs Devices

  • Author

    Mani, R.G. ; Wegscheider, W.

  • Author_Institution
    Dept. of Phys. & Astron., Georgia State Univ., Atlanta, GA, USA
  • Volume
    10
  • Issue
    1
  • fYear
    2011
  • Firstpage
    170
  • Lastpage
    173
  • Abstract
    We examine the inverse magnetic field periodic, radiation-induced magnetoresistance oscillations in GaAs/AlGaAs heterostructures prepared in W. Wegscheider´s group, compare their characteristics with similar oscillations in V. Umansky´s material, and describe the lineshape variation versus the radiation power P in the two systems. We find that there is a good consistency between the results obtained in the different material.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; magnetoresistance; semiconductor heterojunctions; GaAs-AlGaAs; heterostructures; inverse magnetic field periodic magnetoresistance oscillations; lineshape variation; microwave radiation-induced magnetoresistance oscillations; GaAs/AlGaAs; microwave; radiation-induced magnetoresistance oscillations; terahertz; zero-resistance states;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2010.2052285
  • Filename
    5482158
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1511594