Title :
Comparative Study of Microwave Radiation-Induced Magnetoresistance Oscillations in GaAs/AlGaAs Devices
Author :
Mani, R.G. ; Wegscheider, W.
Author_Institution :
Dept. of Phys. & Astron., Georgia State Univ., Atlanta, GA, USA
Abstract :
We examine the inverse magnetic field periodic, radiation-induced magnetoresistance oscillations in GaAs/AlGaAs heterostructures prepared in W. Wegscheider´s group, compare their characteristics with similar oscillations in V. Umansky´s material, and describe the lineshape variation versus the radiation power P in the two systems. We find that there is a good consistency between the results obtained in the different material.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; magnetoresistance; semiconductor heterojunctions; GaAs-AlGaAs; heterostructures; inverse magnetic field periodic magnetoresistance oscillations; lineshape variation; microwave radiation-induced magnetoresistance oscillations; GaAs/AlGaAs; microwave; radiation-induced magnetoresistance oscillations; terahertz; zero-resistance states;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2010.2052285
