DocumentCode
1511776
Title
An improved BJT-based silicon retina with tunable image smoothing capability
Author
Wu, Chung-Yu ; Jiang, Hsin-Chin
Author_Institution
Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
7
Issue
2
fYear
1999
fDate
6/1/1999 12:00:00 AM
Firstpage
241
Lastpage
248
Abstract
An improved bipolar junction transistor (BJT) based silicon retina with simple and compact structure is proposed and analyzed. In the proposed structure, the BJT smoothing network, which models the layer of horizontal cells in the vertebrate retina, is implemented by placing enhancement n-channel MOSFETs among the bases of parasitic BJTs existing in a CMOS process to form an unique and compact structure. Thus, the smoothing characteristics can be tuned in a wide range. Moreover, an extra emitter is incorporated with each BJT at the pixel to act as the row switch. This reduces the cell area of the silicon retina and increases the resolution. Using the proposed new structure, an experimental 64/spl times/64 BJT-based silicon retina chip has been fabricated by using 0.5-/spl mu/m CMOS technology. The measurement results on the tunability of the smooth area in the smoothing network as well as the dynamic characteristics of the proposed silicon retina in detecting moving objects have been presented. It is believed that the improved structure is very suitable for the very large scale integration implementation of the retina and its application systems for CMOS smart sensors.
Keywords
CMOS analogue integrated circuits; CMOS image sensors; VLSI; adaptive signal processing; elemental semiconductors; image enhancement; image resolution; intelligent sensors; silicon; smoothing methods; 0.5 micron; BJT-based silicon retina; CMOS process; Si; cell area; dynamic characteristics; enhancement n-channel MOSFETs; horizontal cells; moving objects; resolution; row switch; smart sensors; smoothing network; tunability; tunable image smoothing; very large scale integration implementation; Area measurement; CMOS process; CMOS technology; MOSFETs; Retina; Semiconductor device measurement; Semiconductor device modeling; Silicon; Smoothing methods; Switches;
fLanguage
English
Journal_Title
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher
ieee
ISSN
1063-8210
Type
jour
DOI
10.1109/92.766751
Filename
766751
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