Title :
Noise parameters of InP-based double heterojunction base-collector self-aligned bipolar transistors
Author :
Danelon, V. ; Aniel, F. ; Benchimol, J.L. ; Mba, J. ; Riet, M. ; Crozat, P. ; Vernet, G. ; Adde, R.
Author_Institution :
Inst. d´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France
fDate :
5/1/1999 12:00:00 AM
Abstract :
The noise performances of a new base-collector self-aligned technology of double-heterojunction single-finger InGaAs-InP bipolar transistor are investigated at 300 K. Noise parameter variations are studied versus frequency in the 2-18 GHz range, versus collector current and emitter area. A low minimum noise figure Fmin=0.6 dB is demonstrated at 2 GHz with a 4.8-μm2 emitter. Variations of Fmin show a minimum versus collector current. The high cutoff frequencies of the devices limit the increase of Fmin versus frequency.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device noise; 0.6 dB; 2 to 18 GHz; 300 K; InGaAs-InP; InP-based DHBT; SHF; base-collector self-aligned technology; collector current; double heterojunction structure; emitter area; heterojunction bipolar transistors; noise parameter variations; noise performances; single-finger bipolar transistor; wide bandwidth microwave application; Bipolar transistors; Cutoff frequency; HEMTs; Heterojunction bipolar transistors; Indium phosphide; MODFETs; Microwave devices; Noise figure; Noise level; Phase noise;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
