Title :
1-mW CW-RT monolithic VCSEL at 1.55 μm
Author :
Boucart, J. ; Starck, C. ; Gaborit, F. ; Plais, A. ; Bouche, N. ; Derouin, E. ; Goldstein, L. ; Fortin, C. ; Carpentier, D. ; Salet, P. ; Brillouet, F. ; Jacquet, J.
Author_Institution :
Alcatel Corp. Res. Centre, Marcoussis, France
fDate :
6/1/1999 12:00:00 AM
Abstract :
We demonstrate the first result of a high-power (1 mW) continuous-wave room-temperature vertical-cavity surface-emitting laser emitting at 1.55 μm using a single InP substrate. The whole structure was grown monolithically using gas source molecular beam epitaxy and incorporates two original approaches. The first originality consists in the growth of a metamorphic GaAs-AlAs Bragg mirror directly on an InP-based cavity. The second novel idea is to use a tunnel junction for current injection. Moreover by using these two approaches the processing is very simple and, therefore, fulfills the goal for low-cost laser production in access and interconnections applications.
Keywords :
distributed Bragg reflector lasers; infrared sources; laser mirrors; laser transitions; molecular beam epitaxial growth; optical transmitters; semiconductor growth; semiconductor lasers; surface emitting lasers; 1 mW; 1.55 /spl mu/m; 1.55 mum; CW room-temperature vertical-cavity surface-emitting laser; DBR lasers; GaAs-AlAs; InP; InP-based cavity; continuous-wave room-temperature vertical-cavity surface-emitting laser; current injection; gas source molecular beam epitaxy; high-power; low-cost laser production; mW CW-RT monolithic VCSEL; metamorphic GaAs-AlAs Bragg mirror; optical interconnections applications; single InP substrate; tunnel junction; Fiber lasers; Gas lasers; Indium phosphide; Mirrors; Reflectivity; Substrates; Surface emitting lasers; Temperature; Thermal resistance; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
