• DocumentCode
    1511899
  • Title

    High-Speed 1.3- \\mu\\hbox {m} p-i-n GaNAsSb/GaAs Waveguide Photodetector

  • Author

    Zegaoui, M. ; Xu, Z. ; Saadsaoud, N. ; Tan, K.H. ; Loke, W.K. ; Wicaksono, S. ; Yoon, S.F. ; Legrand, C. ; Decoster, D. ; Chazelas, J.

  • Author_Institution
    Inst. of Electron., Univ. des Sci. et Technol. de Lille, Villeneuve-d´´Ascq, France
  • Volume
    31
  • Issue
    7
  • fYear
    2010
  • fDate
    7/1/2010 12:00:00 AM
  • Firstpage
    704
  • Lastpage
    706
  • Abstract
    The authors report the demonstration of high-speed GaNAsSb/GaAs p-i -n waveguide photodetector grown by molecular beam epitaxy technique. A 0.4- m-thick GaNAsSb core layer with 3.3% of N and 8% of Sb for detection wavelength over 1.3 m is sandwiched by GaAs and AlGaAs cladding layers. The device exhibits a record value of cutoff frequency of 16.5 GHz.
  • Keywords
    claddings; gallium arsenide; molecular beam epitaxial growth; p-i-n photodiodes; photodetectors; AlGaAs; GaNAsSb-GaAs; cladding layer; detection wavelength; frequency 16.5 GHz; high-speed p-i -n waveguide photodetector; molecular beam epitaxy; Cutoff frequency; GaNAsSb; dilute nitride; waveguide photodetector (WGPD);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2049563
  • Filename
    5482204
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1511899