DocumentCode :
1511899
Title :
High-Speed 1.3- 
p-i-n GaNAsSb/GaAs Waveguide Photodetector
Author :
Zegaoui, M. ; Xu, Z. ; Saadsaoud, N. ; Tan, K.H. ; Loke, W.K. ; Wicaksono, S. ; Yoon, S.F. ; Legrand, C. ; Decoster, D. ; Chazelas, J.
Author_Institution :
Inst. of Electron., Univ. des Sci. et Technol. de Lille, Villeneuve-d´´Ascq, France
Volume :
31
Issue :
7
fYear :
2010
fDate :
7/1/2010 12:00:00 AM
Firstpage :
704
Lastpage :
706
Abstract :
The authors report the demonstration of high-speed GaNAsSb/GaAs p-i -n waveguide photodetector grown by molecular beam epitaxy technique. A 0.4- m-thick GaNAsSb core layer with 3.3% of N and 8% of Sb for detection wavelength over 1.3 m is sandwiched by GaAs and AlGaAs cladding layers. The device exhibits a record value of cutoff frequency of 16.5 GHz.
Keywords :
claddings; gallium arsenide; molecular beam epitaxial growth; p-i-n photodiodes; photodetectors; AlGaAs; GaNAsSb-GaAs; cladding layer; detection wavelength; frequency 16.5 GHz; high-speed p-i -n waveguide photodetector; molecular beam epitaxy; Cutoff frequency; GaNAsSb; dilute nitride; waveguide photodetector (WGPD);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2049563
Filename :
5482204
Link To Document :
