Title :
Enhancement of minority carrier transport in forward biased GaN p-n junction
Author :
Chernyak, L. ; Nootz, G. ; Osinsky, A.
Author_Institution :
Dept. of Phys., Central Florida Univ., Orlando, FL, USA
fDate :
7/5/2001 12:00:00 AM
Abstract :
Forward bias application to a GaN p-n junction (current density ~12 A/cm2) leads to a 1.6-fold increase in the minority electron diffusion length in the p-layer of an epitaxial p-n structure. The effect persists for several days, and is likely associated with electron injection-induced charging of Mg-related deep levels in p-type GaN
Keywords :
III-V semiconductors; carrier lifetime; deep levels; gallium compounds; minority carriers; p-n junctions; wide band gap semiconductors; GaN p-n junction; GaN:Mg; Mg-related deep levels; carrier transport enhancement; electron injection-induced charging; epitaxial p-n structure; forward biased p-n junction; minority carrier transport; minority electron diffusion length; p-layer; p-type GaN;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010605
