Title :
Optimization of a self-aligned titanium silicide process for submicron technology
Author :
Lévy, Didier ; Delpech, Philippe ; Paoli, Maryse ; Masurel, Claude ; Vernet, Michel ; Brun, Nicole ; Jeanne, Jean-Pierre ; Gonchond, Jean-Pierre ; Ada-Hanifi, Mohamed ; Haond, Michel ; D´Ouville, Thierry Ternisien ; Mingam, Hervé
Author_Institution :
Bull, Les Clayes-sous-Bois, France
fDate :
11/1/1990 12:00:00 AM
Abstract :
The optimization of a manufacturable self-aligned titanium silicide process is described. In particular, the integrity of the TiSi 2 layer has been studied versus the BPSG reflow conditions. Excellent contact resistance and very low leakage currents have been obtained. The good device parameters obtained with an n+ or n +/p+ gate have demonstrated that the self-aligned process can be integrated in a 0.8-μm double-metal CMOS process
Keywords :
CMOS integrated circuits; contact resistance; integrated circuit manufacture; integrated circuit technology; leakage currents; metallisation; titanium compounds; 0.8 micron; B2O3-P2O5-SiO2; BPSG reflow conditions; IC fabrication; TiSi2 layer; contact resistance; double-metal CMOS process; low leakage currents; manufacturable self-aligned process; n+ gate; n+/p+ gate; optimization; submicron technology; CMOS process; Conductivity; Furnaces; Manufacturing processes; Rapid thermal annealing; Semiconductor films; Silicides; Silicon; Surface contamination; Titanium;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
