DocumentCode
1512151
Title
A global model for rapid thermal processors
Author
Sorrell, F.Yates ; Harris, John A. ; Gyurcsik, Ronald S.
Author_Institution
North Carolina State Univ., Raleigh, NC, USA
Volume
3
Issue
4
fYear
1990
fDate
11/1/1990 12:00:00 AM
Firstpage
183
Lastpage
188
Abstract
A simple model for the components that make up a rapid thermal processing system is given. These components are the furnace, the pyrometer used to measure temperature, and the control system that utilizes the pyrometer measurement to control the power to the lamps. The models for each of the components are integrated in a numerical code to give a computer simulation of the complete furnace operation. The simulation can be used to investigate the interaction of the furnace, temperature-sensing technique, and the control system. Therefore, the interplay of heat transfer (furnace) properties, optical (pyrometer) parameters, and control gains can be studied. The objective is to define variability in wafer temperature as process parameters change. The following three applications of the model are included: (1) a simulation of open-loop operation; (2) a simulation of the ramp up and subsequent operation with a step change in wafer optical properties; and (3) a simulation of the rapid thermal chemical vapor deposition of polysilicon on silicon oxide which demonstrates the applicability model for actual processes. A technique for correction of pyrometer output to improve temperature control is also presented
Keywords
annealing; chemical vapour deposition; control systems; digital simulation; feedback; heat treatment; modelling; pyrometers; semiconductor technology; temperature control; Si-SiO2; chemical vapor deposition; computer simulation; control system; furnace operation; global model; heat transfer; open-loop operation; process parameters; pyrometer; ramp up simulation; rapid thermal CVD; rapid thermal processors; temperature control; temperature-sensing technique; wafer optical properties; wafer temperature change; Control systems; Furnaces; Lamps; Open loop systems; Power measurement; Power system modeling; Rapid thermal processing; Semiconductor device modeling; Temperature control; Temperature measurement;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/66.61967
Filename
61967
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