• DocumentCode
    1512151
  • Title

    A global model for rapid thermal processors

  • Author

    Sorrell, F.Yates ; Harris, John A. ; Gyurcsik, Ronald S.

  • Author_Institution
    North Carolina State Univ., Raleigh, NC, USA
  • Volume
    3
  • Issue
    4
  • fYear
    1990
  • fDate
    11/1/1990 12:00:00 AM
  • Firstpage
    183
  • Lastpage
    188
  • Abstract
    A simple model for the components that make up a rapid thermal processing system is given. These components are the furnace, the pyrometer used to measure temperature, and the control system that utilizes the pyrometer measurement to control the power to the lamps. The models for each of the components are integrated in a numerical code to give a computer simulation of the complete furnace operation. The simulation can be used to investigate the interaction of the furnace, temperature-sensing technique, and the control system. Therefore, the interplay of heat transfer (furnace) properties, optical (pyrometer) parameters, and control gains can be studied. The objective is to define variability in wafer temperature as process parameters change. The following three applications of the model are included: (1) a simulation of open-loop operation; (2) a simulation of the ramp up and subsequent operation with a step change in wafer optical properties; and (3) a simulation of the rapid thermal chemical vapor deposition of polysilicon on silicon oxide which demonstrates the applicability model for actual processes. A technique for correction of pyrometer output to improve temperature control is also presented
  • Keywords
    annealing; chemical vapour deposition; control systems; digital simulation; feedback; heat treatment; modelling; pyrometers; semiconductor technology; temperature control; Si-SiO2; chemical vapor deposition; computer simulation; control system; furnace operation; global model; heat transfer; open-loop operation; process parameters; pyrometer; ramp up simulation; rapid thermal CVD; rapid thermal processors; temperature control; temperature-sensing technique; wafer optical properties; wafer temperature change; Control systems; Furnaces; Lamps; Open loop systems; Power measurement; Power system modeling; Rapid thermal processing; Semiconductor device modeling; Temperature control; Temperature measurement;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.61967
  • Filename
    61967