Statistical equipment modeling for VLSI manufacturing: an application for LPCVD

Author

Lin, Kuang-Kuo ; Spanos, Costas J.

Author_Institution

Dept. of Electr. Eng & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

3

Issue

4

fYear

1990

fDate

11/1/1990 12:00:00 AM

Firstpage

216

Lastpage

229

Abstract

An equipment characterization and modeling methodology has been developed. The methodology is based on the development of generic first-principle process models. These models are subsequently refined and fitted to specific manufacturing equipment by using a multistage D-optimal experimental design. The methodology has been successfully applied to a low-pressure chemical vapor deposition (LPCVD) furnace for undoped polysilicon deposition. A two-stage D-optimal experiment with 24 runs has yielded fitted models for the film growth rate and film residual stress. The calibrated models agree well with the experimental data and account for the observed variations

Keywords

VLSI; chemical vapour deposition; furnaces; integrated circuit manufacture; statistical analysis; LPCVD; VLSI manufacturing; calibrated models; equipment characterization; film growth rate; film residual stress; first-principle process models; furnace; low-pressure chemical vapor deposition; modeling methodology; multistage D-optimal experimental design; statistical equipment modelling; undoped polysilicon deposition; yielded fitted models; Boats; Chemical vapor deposition; Design for experiments; Furnaces; Process control; Process design; Refining; Semiconductor films; Very large scale integration; Virtual manufacturing;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.61971

Filename

61971