Improved voltage gain of transimpedance amplifier by AlGaAs/InGaAs doped-channel FET´s

Author

Chien, Feng-Tso ; Chan, Yi-Jen

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan

Volume

46

Issue

6

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

1094

Lastpage

1098

Abstract

AlGaAs/InGaAs doped-channel FET´s were investigated, and were utilized for transimpedance (TZ) amplifier circuits. Due to a high current density, a high gain linearity, and high gate breakdown and turn-on voltages of device characteristics, the AlGaAs/InGaAs doped-channel FET is shown to increase the noise margins and voltage gain in a buffered FET logic (BFL) inverter circuit, as compared with the circuit performance built by GaAs MESFET´s. This amplifier also improves transimpedance gain, dynamic signal level, and the 3-dB frequency bandwidth. The transimpedance gain-bandwidth product (Z_T·BW) is 17 GHz·kΩ, which is much higher than in previous published reports

Keywords

III-V semiconductors; aluminium compounds; field effect analogue integrated circuits; gallium arsenide; indium compounds; integrated circuit design; logic gates; optical receivers; preamplifiers; 3-dB frequency bandwidth; AlGaAs-InGaAs; buffered FET logic inverter; current density; doped-channel FETs; dynamic signal level; gain linearity; gate breakdown voltage; noise margins; transimpedance amplifier; transimpedance gain; turn-on voltage; voltage gain; Breakdown voltage; Circuit noise; Current density; FETs; Indium gallium arsenide; Linearity; Logic circuits; Logic devices; Performance gain; Pulse inverters;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.766869

Filename

766869